Volume number52(6)(2):2013.6
Improvemen...

Improvement of the Reproducibility of the Switching Voltage of Resistance Change Random Access Memory by Restricting Formation of Conductive Filaments (Special Issue : Microprocesses and Nanotechnology)

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Improvement of the Reproducibility of the Switching Voltage of Resistance Change Random Access Memory by Restricting Formation of Conductive Filaments

(Special Issue : Microprocesses and Nanotechnology)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
024644008
Material type
記事
Author
Saeko Furuyaほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2013-06
Material Format
Paper
Journal name
Japanese journal of applied physics : JJAP 52(6)(2):2013.6
Publication Page
p.06GF07-1-4
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Paper

Material Type
記事
Author/Editor
Saeko Furuya
Shintaro Otsuka
Tomohiro Shimizu 他
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
52(6)(2):2013.6
Volume
52
Issue
6
Sequential issue number
2