Low Threshold Current Density Operation of a GaInAsP/Si Hybrid Laser Prepared by Low-Temperature N₂ Plasma Activated Bonding

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Material Type: 記事
Title: Low Threshold Current Density Operation of a GaInAsP/Si Hybrid Laser Prepared by Low-Temperature N₂ Plasma Activated Bonding
Author/Editor: Yusuke Hayashi
Ryo Osabe
Keita Fukuda 他
Author Heading: Yusuke Hayashi
Ryo Osabe
Keita Fukuda
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 52(6)(1):2013.6
Volume: 52
Issue: 6
Sequential issue number: 1
Pages: 060202-1-3
Publication date of volume/issue (W3CDTF): 2013-06
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024644496
http://id.ndl.go.jp/bib/024644496
Bibliographic Record Category (NDL): 632