Volume number52(6)(1):2013.6
High-Perfo...

High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature

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High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
024644508
Material type
記事
Author
Kookhyun Choiほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2013-06
Material Format
Paper
Journal name
Japanese journal of applied physics : JJAP 52(6)(1):2013.6
Publication Page
p.060204-1-4
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Paper

Material Type
記事
Author/Editor
Kookhyun Choi
Minseok Kim
Seongpil Chang 他
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
52(6)(1):2013.6
Volume
52
Issue
6
Sequential issue number
1
Pages
060204-1-4