直並列FET構成を用いた60GHz帯90nm Si-CMOS高耐電力T/Rスイッチ (マイクロ波)

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直並列FET構成を用いた60GHz帯90nm Si-CMOS高耐電力T/Rスイッチ

(マイクロ波)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
024679685
Material type
記事
Author
谷藤 正一ほか
Publisher
東京 : 電子情報通信学会
Publication date
2013-06
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113(110):2013.6.27・28
Publication Page
p.59-64
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Paper

Material Type
記事
Author/Editor
谷藤 正一
亀田 卓
末松 憲治 他
Series Title
Alternative Title
High Power Handling 60GHz Transmit/Receive Switch Using Series/Shunt FETs in 90nm Si-CMOS Process
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
113(110):2013.6.27・28
Volume
113
Issue
110