ゲートスタックへのHf導入によるメタル・ソース/ドレインGe p-MOSFETの高移動度化 (シリコン材料・デバイス)

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ゲートスタックへのHf導入によるメタル・ソース/ドレインGe p-MOSFETの高移動度化

(シリコン材料・デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
024682907
Material type
記事
Author
山本 圭介ほか
Publisher
東京 : 電子情報通信学会
Publication date
2013-06-18
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113(87):2013.6.18
Publication Page
p.29-32
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Paper

Material Type
記事
Author/Editor
山本 圭介
佐田 隆宏
王 冬 他
Alternative Title
Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
113(87):2013.6.18
Volume
113
Issue
87