雑誌日本結晶成長学会誌
Volume number39(1)-43(5):2012-2016
Article4H-SiCエピタキ...

4H-SiCエピタキシャル成長における欠陥挙動解析と欠陥制御技術 (特集 SiCの現状と今後の展開)

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4H-SiCエピタキシャル成長における欠陥挙動解析と欠陥制御技術(特集 SiCの現状と今後の展開)

Call No. (NDL)
Z15-339
Bibliographic ID of National Diet Library
024694273
Material type
記事
Author
土田 秀一ほか
Publisher
大阪 : 日本結晶成長学会
Publication date
2013
Material Format
Paper
Journal name
日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth 40(1):2013
Publication Page
p.33-41
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Material Type
記事
Title
4H-SiCエピタキシャル成長における欠陥挙動解析と欠陥制御技術
Author/Editor
土田 秀一
鎌田 功穂
宮澤 哲哉 他
Series Title
特集 SiCの現状と今後の展開
Author Heading
土田 秀一
鎌田 功穂
宮澤 哲哉
Alternative Title
Analysis of Defect Formation in 4H-SiC Epitaxial Growth and Development of Defect Control Techniques
Periodical title
日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth
No. or year of volume/issue
40(1):2013
Volume
40
Issue
1