Gate Metal Dependent Reverse Leakage Mechanisms in AIGaN/GaN Schottky Diode

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Material Type: 記事
Title: Gate Metal Dependent Reverse Leakage Mechanisms in AIGaN/GaN Schottky Diode
Author/Editor: Jong-Hoon Shin
Jinhong Park
SeungYup Jang 他
Author Heading: Jong-Hoon Shin
Jinhong Park
SeungYup Jang
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 52(7)(1):2013.7
Volume: 52
Issue: 7
Sequential issue number: 1
Pages: 070203-1-3
Publication date of volume/issue (W3CDTF): 2013-07
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024758925
http://id.ndl.go.jp/bib/024758925
Bibliographic Record Category (NDL): 632