SiC単結晶エピタキ...

SiC単結晶エピタキシャルウェーハの高品質化 (ワイドバンドギャップ材料の基礎研究の充実と新たな応用)

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SiC単結晶エピタキシャルウェーハの高品質化(ワイドバンドギャップ材料の基礎研究の充実と新たな応用)

Call No. (NDL)
Z15-243
Bibliographic ID of National Diet Library
024932385
Material type
記事
Author
大谷 昇
Publisher
東京 : 応用物理学会
Publication date
2013-10
Material Format
Paper
Journal name
応用物理 82(10):2013.10
Publication Page
p.846-851
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Paper Digital

Material Type
記事
Author/Editor
大谷 昇
Author Heading
Alternative Title
Toward the realization of high quality SiC epitaxial wafers
Periodical title
応用物理
No. or year of volume/issue
82(10):2013.10
Volume
82
Issue
10