有機金属気相エピタキシャル法により作製したEu,Si共添加GaNにおける欠陥準位の深準位過渡応答測定 (電子部品・材料)

有機金属気相エピタキシャル法により作製したEu,Si共添加GaNにおける欠陥準位の深準位過渡応答測定

(電子部品・材料)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113(330):2013.11.28・29

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Material Type: 記事
Title: 有機金属気相エピタキシャル法により作製したEu,Si共添加GaNにおける欠陥準位の深準位過渡応答測定
Author/Editor: 桒田宗一郎
小泉淳
藤原康文
Series Title: 電子部品・材料
Author Heading: 桒田宗一郎
小泉淳
藤原康文
Alternative Title: Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 113(330):2013.11.28・29
Volume: 113
Issue: 330
Pages: 67-70
Publication date of volume/issue (W3CDTF): 2013-11
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: Eu添加GaN
DLTS
Eu-doped GaN
NDLC: ZN33
Target Audience: 一般
Report No. (Article): CPM2013-137
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 025087421
http://id.ndl.go.jp/bib/025087421
Bibliographic Record Category (NDL): 632