依頼講演 VO₂単結晶薄膜中の転移応力制御による急峻な金属絶縁体転移の実現 (シリコン材料・デバイス)

依頼講演 VO₂単結晶薄膜中の転移応力制御による急峻な金属絶縁体転移の実現

(シリコン材料・デバイス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114(88):2014.6.19

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

CiNii Research
Search Service
You can check the holdings of institutions and databases with which CiNii Research is linked at the site of CiNii Research.
Check the holdings of this book

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 記事
Title: 依頼講演 VO₂単結晶薄膜中の転移応力制御による急峻な金属絶縁体転移の実現
Author/Editor: 矢嶋赳彬
二宮裕磨
西村知紀他
Series Title: シリコン材料・デバイス
Author Heading: 矢嶋赳彬
二宮裕磨
西村知紀
Alternative Title: Ultra-sharp metal-to-insulator transition in a single crystal VO₂ thin film by controlling the local stress of transition
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 114(88):2014.6.19
Volume: 114
Issue: 88
Pages: 65-67
Publication date of volume/issue (W3CDTF): 2014-06-19
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: 金属絶縁体転移
転移応力
基板格子束縛
スイッチング素子
Metal-to-insulator transition
stress of transition
substrate strain
switching device
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2014-55
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 025590285
http://id.ndl.go.jp/bib/025590285
Bibliographic Record Category (NDL): 632