Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH₄/H₂ PE-CVD

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Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH₄/H₂ PE-CVD

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Material Type: 記事
Title: Effect of Gas Flow Rate on the High-Rate, Localized Jet-Deposition of Silicon in SiH₄/H₂ PE-CVD
Author/Editor: Satoshi NISHIDA
Hiroshi MUTA
Shizuma KURIBAYASHI
Author Heading: Satoshi NISHIDA
Hiroshi MUTA
Shizuma KURIBAYASHI
Periodical title: Journal of chemical engineering of Japan
No. or year of volume/issue: 47(4-7):2014.7
Volume: 47
Issue: 4-7
Pages: 478-482
Publication date of volume/issue (W3CDTF): 2014-07
ISSN (Periodical Title): 0021-9592
ISSN-L (Periodical Title): 0021-9592
Publication (Periodical Title): Tokyo : Society of Chemical Engineers
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: CVD
Supersonic Jet
CFD
Silicon Deposition
High Deposition Rate
NDLC: ZP1
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-R395
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 025602233
http://id.ndl.go.jp/bib/025602233
Bibliographic Record Category (NDL): 632