創案と開発オージェ電子-光電子コインシデンス分光によるシリコン単結晶表面および酸化シリコン超薄膜の局所電子状態の研究

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Material Type: 記事
Title: 創案と開発オージェ電子-光電子コインシデンス分光によるシリコン単結晶表面および酸化シリコン超薄膜の局所電子状態の研究
Author/Editor: 垣内拓大
間瀬一彦
長岡伸一
Author Heading: 垣内拓大
間瀬一彦
長岡伸一
Alternative Title: Study of Local Valence Electronic States of Clean Si Surfaces and Ultrathin SiO₂ Films Grown on Si by Using Auger-Photoelectron Coincidence Spectroscopy
Periodical title: ぶんせき / 日本分析化学会編
No. or year of volume/issue: 2014(7)=475:2014.7
Volume: 2014
Issue: 7
Sequential issue number: 475
Pages: 374-380
Publication date of volume/issue (W3CDTF): 2014-07
ISSN (Periodical Title): 0386-2178
ISSN-L (Periodical Title): 0386-2178
Publication (Periodical Title): 東京 : 日本分析化学会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZP4
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z17-729
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 025622256
http://id.ndl.go.jp/bib/025622256
Bibliographic Record Category (NDL): 632