アンモニアガスを用いた液相成長法によるGaN薄膜の成長 : 成長原理、新成長装置作製に関して

Journal name: 名城大学総合研究所紀要 = Bulletin of Research Institute of Meijo University / 名城大学総合研究所編 (16):2011

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Material Type: 記事
Title: アンモニアガスを用いた液相成長法によるGaN薄膜の成長 : 成長原理、新成長装置作製に関して
Author/Editor: 成塚重弥
風間正志
山内洋哉他
Author Heading: 成塚重弥
風間正志
山内洋哉
Alternative Title: Liquid Phase Epitaxy of GaN Thin Layer using Ammonia : Principle of LPE Growth and Preparation of New Growth Equipment
Periodical title: 名城大学総合研究所紀要 = Bulletin of Research Institute of Meijo University / 名城大学総合研究所編
No. or year of volume/issue: (16):2011
Issue: 16
Pages: 125-128
Publication date of volume/issue (W3CDTF): 2011
ISSN (Periodical Title): 1344-8099
ISSN-L (Periodical Title): 1344-8099
Publication (Periodical Title): 名古屋 : 名城大学総合研究所
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM2
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z14-B424
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 025628013
http://id.ndl.go.jp/bib/025628013
Bibliographic Record Category (NDL): 632