Czシリコン単結晶の...

Czシリコン単結晶の凝固プロセス中に水素を添加することで達成できるプロセスゾーンの拡大 (ミニ特集 材料の高強度化・高機能化を実現する凝固プロセス技術と解析技術の最前線)

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Czシリコン単結晶の凝固プロセス中に水素を添加することで達成できるプロセスゾーンの拡大(ミニ特集 材料の高強度化・高機能化を実現する凝固プロセス技術と解析技術の最前線)

Call No. (NDL)
Z17-313
Bibliographic ID of National Diet Library
025834016
Material type
記事
Author
杉村 渉ほか
Publisher
仙台 : 日本金属学会 ; 1994-
Publication date
2014-10
Material Format
Paper
Journal name
まてりあ = Materia Japan 53(10):2014.10
Publication Page
p.454-457
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Paper Digital

Material Type
記事
Author/Editor
杉村 渉
小野 敏昭
宝来 正隆 他
Alternative Title
The Effects of Hydrogen Doping on Expansion of a Process Zone of Cz Silicon Single Crystals
Periodical title
まてりあ = Materia Japan
No. or year of volume/issue
53(10):2014.10
Volume
53
Issue
10