雑誌電子情報通信学会技術研究報告 : 信学技報
Volume number114(291):2014.11.6・7
ArticleGate-on-Ge...

Gate-on-Germanium Source (GoGeS)縦型トンネルFETの解析モデルの検討 (シリコン材料・デバイス)

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Gate-on-Germanium Source (GoGeS)縦型トンネルFETの解析モデルの検討

(シリコン材料・デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
025980554
Material type
記事
Author
大村 泰久ほか
Publisher
東京 : 電子情報通信学会
Publication date
2014-11
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114(291):2014.11.6・7
Publication Page
p.7-12
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Paper

Material Type
記事
Title
Gate-on-Germanium Source (GoGeS)縦型トンネルFETの解析モデルの検討
Author/Editor
大村 泰久
佐藤 伸吾
Abhijit MALLIK
Series Title
シリコン材料・デバイス
Author Heading
大村 泰久
佐藤 伸吾
Abhijit MALLIK
Alternative Title
Physics-based Analytical Model for Gate-on-Germanium Source (GoGeS) TFET
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
114(291):2014.11.6・7
Volume
114
Issue
291