4H-SiC BJTの電流増幅率の温度依存性 (電子ディスプレイ)

4H-SiC BJTの電流増幅率の温度依存性

(電子ディスプレイ)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114(359):2014.12.12

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Material Type: 記事
Title: 4H-SiC BJTの電流増幅率の温度依存性
Author/Editor: 浅田聡志
奥田貴史
木本恒暢他
Series Title: 電子ディスプレイ
Author Heading: 浅田聡志
奥田貴史
木本恒暢
Alternative Title: Temperature Dependence of Current Gain in 4H-SiC BJTs
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 114(359):2014.12.12
Volume: 114
Issue: 359
Pages: 115-118
Publication date of volume/issue (W3CDTF): 2014-12-12
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: 4H-SiC BJT
増幅率
高注入状態
Current gain
High injection
NDLC: ZN33
Target Audience: 一般
Report No. (Article): EID2014-35
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 026034710
http://id.ndl.go.jp/bib/026034710
Bibliographic Record Category (NDL): 632