Bibliographic Record
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- Material Type
- 記事
- Author/Editor
- 森山 拓洋山崎 隆浩大野 隆央 他
- Series Title
- Alternative Title
- Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) : Analyses of Various NiO Surface States Using Ab Initio Calculations
- Periodical title
- 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
- No. or year of volume/issue
- 114(359):2014.12.12
- Volume
- 114
- Issue
- 359