DNAメモリトランジスタの電荷保持機構と伝導機構 (シリコン材料・デバイス)

DNAメモリトランジスタの電荷保持機構と伝導機構

(シリコン材料・デバイス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 114(360):2014.12.12

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Material Type: 記事
Title: DNAメモリトランジスタの電荷保持機構と伝導機構
Author/Editor: 中村昇平
松尾直人
部家彰他
Series Title: シリコン材料・デバイス
Author Heading: 中村昇平
松尾直人
部家彰
Alternative Title: Conduction mechanism and Charge retention mechanism for DNA memory transistor
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 114(360):2014.12.12
Volume: 114
Issue: 360
Pages: 17-20
Publication date of volume/issue (W3CDTF): 2014-12-12
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: DNA
FET
Si
トラップ
デトラップ
キャリア
電荷保持
Trap
Detrap
Carrier
Charge retention property
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2014-111
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 026035000
http://id.ndl.go.jp/bib/026035000
Bibliographic Record Category (NDL): 632