放射光その場X線回折による半導体成長機構の解明(特集半導体結晶成長機構のその場観察)

Journal name: 日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth 42(3):2015

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Material Type: 記事
Title: 放射光その場X線回折による半導体成長機構の解明
Author/Editor: 高橋正光
Series Title: 特集半導体結晶成長機構のその場観察
Author Heading: 高橋正光
Alternative Title: Study of Semiconductor Growth Mechanism using in Situ Synchrotron X-ray Diffraction
Periodical title: 日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth
No. or year of volume/issue: 42(3):2015
Volume: 42
Issue: 3
Pages: 201-209,表紙
Publication date of volume/issue (W3CDTF): 2015
ISSN (Periodical Title): 2188-7268
ISSN-L (Periodical Title): 0385-6275
Publication (Periodical Title): 東京 : 日本結晶成長学会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: YH247-1397
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 026842879
http://id.ndl.go.jp/bib/026842879
Bibliographic Record Category (NDL): 632