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細孔エンジニアリングによる導電性ブリッジメモリ(CBRAM)の高性能化

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細孔エンジニアリングによる導電性ブリッジメモリ(CBRAM)の高性能化

Call No. (NDL)
Z15-243
Bibliographic ID of National Diet Library
027100728
Material type
記事
Author
木下 健太郎
Publisher
東京 : 応用物理学会
Publication date
2016-02
Material Format
Paper
Journal name
応用物理 85(2):2016.2
Publication Page
p.132-136
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Paper Digital

Material Type
記事
Author/Editor
木下 健太郎
Author Heading
Alternative Title
Improved memory performance of conducting-bridge random access memory (CBRAM) by introducing pore-engineering
Periodical title
応用物理
No. or year of volume/issue
85(2):2016.2
Volume
85
Issue
2
Pages
132-136