Help
Help
雑誌電子情報通信学会技術研究報告 : 信学技報
Volume number115(400)-115(402):2016.1.19-2016.1.20
Article3.3kV耐圧SiC...

3.3kV耐圧SiC-MOSFETの低抵抗化技術と世界初鉄道車両用フルSiC適用インバータの実現 (電子デバイス)

Icons representing 記事

3.3kV耐圧SiC-MOSFETの低抵抗化技術と世界初鉄道車両用フルSiC適用インバータの実現

(電子デバイス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
027109958
Material type
記事
Author
濱田 憲治ほか
Publisher
東京 : 電子情報通信学会
Publication date
2016-01-20
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 115(402):2016.1.20
Publication Page
p.7-12
View All

Holdings of Libraries in Japan

This page shows libraries in Japan other than the National Diet Library that hold the material.

List of Cooperating Institutions and Databases

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

  • CiNii Research

    Search Service
    You can check the holdings of institutions and databases with which CiNii Research is linked at the site of CiNii Research.
    Check the holdings of this book

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Paper

Material Type
記事
Title
3.3kV耐圧SiC-MOSFETの低抵抗化技術と世界初鉄道車両用フルSiC適用インバータの実現
Author/Editor
濱田 憲治
日野 史郎
三浦 成久 他
Series Title
電子デバイス
Author Heading
濱田 憲治
日野 史郎
三浦 成久
Alternative Title
Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3 kV and Realization of the World's First All-SiC Traction Inverter
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
115(402):2016.1.20
Volume
115
Issue
402