シミュレーションによるSiCトレンチ型MOSFETの特性予測 (特集製品開発を支えるシミュレーション技術)

シミュレーションによるSiCトレンチ型MOSFETの特性予測

(特集製品開発を支えるシミュレーション技術)

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Material Type: 記事
Title: シミュレーションによるSiCトレンチ型MOSFETの特性予測
Author/Editor: 小林勇介
木下明将
大西泰彦
Series Title: 特集製品開発を支えるシミュレーション技術
Author Heading: 小林勇介
木下明将
大西泰彦
Alternative Title: Simulation Based Prediction of SiC Trench-Type MOSFET Characteristics
Periodical title: 富士電機技報 = Fuji Electric journal
No. or year of volume/issue: 89(1)=889:2016.3
Volume: 89
Issue: 1
Sequential issue number: 889
Pages: 11-15
Publication date of volume/issue (W3CDTF): 2016-03
ISSN (Periodical Title): 2187-1817
ISSN-L (Periodical Title): 2187-1817
Publication (Periodical Title): 東京 : 富士電機技術開発本部 ; 2012-
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZN31
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z16-245
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 027320060
http://id.ndl.go.jp/bib/027320060
Bibliographic Record Category (NDL): 632