直接貼付InP/Si基板を用いたGaInAsPレーザの試作 (光エレクトロニクス)

直接貼付InP/Si基板を用いたGaInAsPレーザの試作

(光エレクトロニクス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 116(102):2016.6.17

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Material Type: 記事
Title: 直接貼付InP/Si基板を用いたGaInAsPレーザの試作
Author/Editor: 西山哲央
松本恵一
岸川純也
大貫雄也
鎌田直樹
下村和彦
Series Title: 光エレクトロニクス
Author Heading: 西山哲央
松本恵一
岸川純也
大貫雄也
鎌田直樹
下村和彦
Alternative Title: Fabrication of GaInAsP laser using directly bonded InP/Si
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 116(102):2016.6.17
Volume: 116
Issue: 102
Pages: 15-20
Publication date of volume/issue (W3CDTF): 2016-06-17
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: InP
Si
直接貼付
MOVPE
集積
光デバイス
レーザ
direct wafer bonding
integration
optical device
semiconductor laser
NDLC: ZN33
Target Audience: 一般
Report No. (Article): OPE2016-12
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 027486023
http://id.ndl.go.jp/bib/027486023
Bibliographic Record Category (NDL): 632