不揮発情報一括書き込み・読み出し可能な初期値確定SRAM (集積回路)

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不揮発情報一括書き込み・読み出し可能な初期値確定SRAM

(集積回路)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
028441777
Material type
記事
Author
水谷 朋子ほか
Publisher
東京 : 電子情報通信学会
Publication date
2017
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 117(167):2017.7.31-8.2
Publication Page
p.49-54
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Paper

Material Type
記事
Author/Editor
水谷 朋子
竹内 潔
更屋 拓哉
篠原 尋史
小林 正治
平本 俊郎
Series Title
Alternative Title
Parallel Programming of Non-volatile Power-up States of SRAM
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
117(167):2017.7.31-8.2
Volume
117
Issue
167