原子層堆積法を用いた酸化物薄膜スタックの電気特性制御と多値メモリ

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Material Type: 記事
Title: 原子層堆積法を用いた酸化物薄膜スタックの電気特性制御と多値メモリ
Author/Editor: 生田目俊秀
Author Heading: 生田目俊秀
Alternative Title: Electrical characteristics of multi-level switching memory with a metal-oxide stack structure by atomic layer deposition
Periodical title: 応用物理
No. or year of volume/issue: 87(1)=985:2018.1
Volume: 87
Issue: 1
Sequential issue number: 985
Pages: 25-28
Publication date of volume/issue (W3CDTF): 2018-01
ISSN (Periodical Title): 0369-8009
ISSN-L (Periodical Title): 0369-8009
Publication (Periodical Title): 東京 : 応用物理学会
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: ZM17
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z15-243
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 028770719
http://id.ndl.go.jp/bib/028770719
Bibliographic Record Category (NDL): 632