招待講演急峻なSSを持つPN-Body Tied SOI-FETを用いたMOS Diode接続での特性および微小電圧整流実験 (シリコン材料・デバイス)

招待講演急峻なSSを持つPN-Body Tied SOI-FETを用いたMOS Diode接続での特性および微小電圧整流実験

(シリコン材料・デバイス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 118(291):2018.11.8・9

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Material Type: 記事
Title: 招待講演急峻なSSを持つPN-Body Tied SOI-FETを用いたMOS Diode接続での特性および微小電圧整流実験
Author/Editor: 百瀬駿
井田次郎
山田拓弥
森貴之
伊東健治
石橋孝一郎
新井康夫
Series Title: シリコン材料・デバイス
Author Heading: 百瀬駿
井田次郎
山田拓弥
森貴之
伊東健治
石橋孝一郎
新井康夫
Alternative Title: Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 118(291):2018.11.8・9
Volume: 118
Issue: 291
Pages: 59-64
Publication date of volume/issue (W3CDTF): 2018-11
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: RF Energy Harvesting
SOI-FET
Subthreshold Slope
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2018-76
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 029386402
http://id.ndl.go.jp/bib/029386402
Bibliographic Record Category (NDL): 632