高周波化に向けたGaN系パワーデバイスの開発(特集省エネ社会を支える高効率小型電源技術 : 高周波電源コンポーネンツの最前線)

Journal name: 電気学会誌 = The journal of the Institute of Electrical Engineers of Japan 139(2):2019.2

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Material Type: 記事
Title: 高周波化に向けたGaN系パワーデバイスの開発
Author/Editor: 柳原学
上田哲三
Series Title: 特集省エネ社会を支える高効率小型電源技術 : 高周波電源コンポーネンツの最前線
Author Heading: 柳原学
上田哲三
Alternative Title: Development of GaN Power Devices for High Switching Frequency
Periodical title: 電気学会誌 = The journal of the Institute of Electrical Engineers of Japan
No. or year of volume/issue: 139(2):2019.2
Volume: 139
Issue: 2
Pages: 80-83
Publication date of volume/issue (W3CDTF): 2019-02
ISSN (Periodical Title): 1340-5551
ISSN-L (Periodical Title): 1340-5551
Publication (Periodical Title): 東京 : 電気学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: GaN
GaN on Si
パワーデバイス
スイッチング
電流コラプス
NDLC: ZN31
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z16-177
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 029493592
http://id.ndl.go.jp/bib/029493592
Bibliographic Record Category (NDL): 632