Position-controlled growth of SiGe crystal grains on insulator by indentation-induced solid-phase crystallization (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

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Position-controlled growth of SiGe crystal grains on insulator by indentation-induced solid-phase crystallization(Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
10191548
Material type
記事
Author
Kaoru Tokoほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2009-03
Material Format
Digital
Journal name
Japanese journal of applied physics : JJAP 48(3) (3) 2009.3
Publication Page
p.03B007-1~4
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Digital

Material Type
記事
Author/Editor
Kaoru Toko
Taizoh Sadoh
Masanobu Miyao
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
48(3) (3) 2009.3
Volume
48
Issue
3
Other Volume
3