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Observation of new isoelectronic trap luminescence in nitrogen δ-doped GaP (Special issue: Solid state devices and materials)

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Observation of new isoelectronic trap luminescence in nitrogen δ-doped GaP

(Special issue: Solid state devices and materials)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
10212373
Material type
記事
Author
Michio Ikezawaほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2009-04
Material Format
Paper
Journal name
Japanese journal of applied physics : JJAP 48(4) (2) 2009.4
Publication Page
p.04C158-1～3
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Paper

Material Type
記事
Title
Observation of new isoelectronic trap luminescence in nitrogen δ-doped GaP
Author/Editor
Michio Ikezawa
Yoshiki Sakuma
Masato Watanabe 他
Series Title
Special issue: Solid state devices and materials
Author Heading
Michio Ikezawa
Yoshiki Sakuma
Masato Watanabe
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
48(4) (2) 2009.4
Volume
48
Issue
4
Other Volume
2