Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor (Silicon devices and materials)

Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor

(Silicon devices and materials)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 109(98) 2009.6.24-26

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Material Type: 記事
Title: Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor
Author/Editor: T. Sadoh
T. Tanaka
Y. Ohta 他
Series Title: Silicon devices and materials
Author Heading: T. Sadoh
T. Tanaka
Y. Ohta
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 109(98) 2009.6.24-26
Volume: 109
Issue: 98
Pages: 177～180
Publication date of volume/issue (W3CDTF): 2009-06
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2009-86
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 10275439
http://id.ndl.go.jp/bib/10275439
Bibliographic Record Category (NDL): 632