Photoluminescence characteristics of InAs quantum dots with GaInP cover layer grown by metalorganic chemical vapor deposition
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- Material Type
- 記事
- Author/Editor
- Tomoyuki SengokuRyoichiro SuzukiKosuke Nemoto 他
- Author Heading
- Periodical title
- Japanese journal of applied physics : JJAP
- No. or year of volume/issue
- 48(7) (1) 2009.7
- Volume
- 48
- Issue
- 7
- Other Volume
- 1
- Pages
- 070203-1～3