Interface states and trapping effects in Al2O3- and ZrO2/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures

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Interface states and trapping effects in Al2O3- and ZrO2/InAlN/AlN/GaN metal-oxide-semiconductor heterostructures

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
10365344
Material type
記事
Author
Milan Tapajnaほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2009-09
Material Format
Digital
Journal name
Japanese journal of applied physics : JJAP 48(9) (1) 2009.9
Publication Page
p.090201-1~3
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Digital

Material Type
記事
Author/Editor
Milan Tapajna
Jan Kuzmik
Karol Cico 他
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
48(9) (1) 2009.9
Volume
48
Issue
9
Other Volume
1
Pages
090201-1~3