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雑誌電子情報通信学会技術研究報告 : 信学技報
Volume number110(14)-110(23):2010.4.23-2010.5.14
ArticleFormation ...

Formation of defect-free Ge island on insulator by Ni-imprint induced Si micro-seeding rapid melting (有機エレクトロニクス)

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Formation of defect-free Ge island on insulator by Ni-imprint induced Si micro-seeding rapid melting

(有機エレクトロニクス)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
10668147
Material type
記事
Author
坂根 尭ほか
Publisher
東京 : 電子情報通信学会
Publication date
2010-04-23
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 110(16) 2010.4.23
Publication Page
p.53～57
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Paper

Material Type
記事
Title
Formation of defect-free Ge island on insulator by Ni-imprint induced Si micro-seeding rapid melting
Author/Editor
坂根 尭
都甲 薫
田中 貴規 他
Series Title
有機エレクトロニクス
Author Heading
坂根 尭
都甲 薫
田中 貴規
Alternative Title
インプリントSi種結晶からの溶融エピタキシャル成長による単結晶GOIの無欠陥形成
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
110(16) 2010.4.23
Volume
110
Issue
16