Formation of defect-free Ge island on insulator by Ni-imprint induced Si micro-seeding rapid melting (シリコン材料・デバイス)

Formation of defect-free Ge island on insulator by Ni-imprint induced Si micro-seeding rapid melting

(シリコン材料・デバイス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 110(15) 2010.4.23

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Material Type: 記事
Title: Formation of defect-free Ge island on insulator by Ni-imprint induced Si micro-seeding rapid melting
Author/Editor: 坂根尭
都甲薫
田中貴規他
Series Title: シリコン材料・デバイス
Author Heading: 坂根尭
都甲薫
田中貴規
Alternative Title: インプリントSi種結晶からの溶融エピタキシャル成長による単結晶GOIの無欠陥形成
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 110(15) 2010.4.23
Volume: 110
Issue: 15
Pages: 53～57
Publication date of volume/issue (W3CDTF): 2010-04-23
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: eng
Subject Heading: SiGeミキシング誘起溶融成長
金属誘起固相成長
ゲルマニウム(Ge)デバイス
Germanium
Ge
Ge on Insulator
GOI
Metal Induced Crystallization
MIC
Liquid-Phase Epitaxial Growth
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2010-12
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 10668394
http://id.ndl.go.jp/bib/10668394
Bibliographic Record Category (NDL): 632