SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討 (シリコン材料・デバイス)

SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討

(シリコン材料・デバイス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 110(90) 2010.6.22

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Material Type: 記事
Title: SiナノワイヤへのNiシリサイド形成と過剰な侵入とその抑制に関する検討
Author/Editor: 茂森直登
佐藤創志
角嶋邦之他
Series Title: シリコン材料・デバイス
Author Heading: 茂森直登
佐藤創志
角嶋邦之
Alternative Title: Nickel silicide encroachment in silicon Nanowire and its suppression
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 110(90) 2010.6.22
Volume: 110
Issue: 90
Pages: 17～22
Publication date of volume/issue (W3CDTF): 2010-06-22
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: Siナノワイヤ
Niシリサイド
Ni拡散の制御
Si nanowire
Nisilicide
Control of Ni diffusion
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2010-36
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 10752898
http://id.ndl.go.jp/bib/10752898
Bibliographic Record Category (NDL): 632