Volume number79(7) 2010.7
応用物理学会業績賞受...

応用物理学会業績賞受賞者随想 微細MOSFETの高電界効果と素子構造--信頼性物理の研究

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応用物理学会業績賞受賞者随想 微細MOSFETの高電界効果と素子構造--信頼性物理の研究

Call No. (NDL)
Z15-243
Bibliographic ID of National Diet Library
10764565
Material type
記事
Author
武田 英次
Publisher
東京 : 応用物理学会
Publication date
2010-07
Material Format
Paper
Journal name
応用物理 79(7) 2010.7
Publication Page
p.642~645
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Paper

Material Type
記事
Author/Editor
武田 英次
Author Heading
Alternative Title
High field effects and device structures in scaled MOSFETs: reliability physics
Periodical title
応用物理
No. or year of volume/issue
79(7) 2010.7
Volume
79
Issue
7
Pages
642~645