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雑誌材料技術
Volume number28巻1号-29巻6号 2010年1月-2011年12月
ArticleAsymmetric...

Asymmetric hysteresis loops and leakage current behaviors in Au/PZT/Pt/Al2O3/SiO2/Si thin films prepared by MOCVD method

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Asymmetric hysteresis loops and leakage current behaviors in Au/PZT/Pt/Al2O3/SiO2/Si thin films prepared by MOCVD method

Call No. (NDL)
Z14-1027
Bibliographic ID of National Diet Library
10775045
Material type
記事
Author
Masrurohほか
Publisher
[東京] : 材料技術研究協会
Publication date
2010
Material Format
Paper
Journal name
材料技術 = Material technology 28(2) 2010.3・4
Publication Page
p.77～83
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Paper

Material Type
記事
Title
Asymmetric hysteresis loops and leakage current behaviors in Au/PZT/Pt/Al2O3/SiO2/Si thin films prepared by MOCVD method
Author/Editor
Masruroh
佐々木 善和
小杉 雄太郎 他
Author Heading
Masruroh
佐々木 善和
小杉 雄太郎
Alternative Title
MOCVD法によって作製されたAu/PZT/Pt/Al2O3/SiO2/Si薄膜の非対称ヒステリシス曲線および漏洩電流
Periodical title
材料技術 = Material technology
No. or year of volume/issue
28(2) 2010.3・4
Volume
28
Issue
2
Pages
77～83