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雑誌住友電工テクニカルレビュー : 住友電工グループ技術論文誌
Volume number(177) 2010.7
Article携帯電話基地局用窒化...

携帯電話基地局用窒化ガリウム電力増幅器(GaN HEMT)の開発

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携帯電話基地局用窒化ガリウム電力増幅器(GaN HEMT)の開発

Call No. (NDL)
Z16-298
Bibliographic ID of National Diet Library
10792941
Material type
記事
Author
井上 和孝ほか
Publisher
大阪 : 住友電気工業
Publication date
2010-07
Material Format
Paper
Journal name
住友電工テクニカルレビュー = Technical review : 住友電工グループ技術論文誌 (177) 2010.7
Publication Page
p.97～102
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Paper

Material Type
記事
Title
携帯電話基地局用窒化ガリウム電力増幅器(GaN HEMT)の開発
Author/Editor
井上 和孝
佐野 征吾
舘野 泰範 他
Author Heading
井上 和孝
佐野 征吾
舘野 泰範
Alternative Title
Development of gallium nitride high electron mobility transistor for cellular base stations
Periodical title
住友電工テクニカルレビュー = Technical review : 住友電工グループ技術論文誌
No. or year of volume/issue
(177) 2010.7
Issue
177
Pages
97～102
Publication date of volume/issue (W3CDTF)
2010-07