Extremely low on-resistance and high breakdown voltage observed in vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates

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Material Type: 記事
Title: Extremely low on-resistance and high breakdown voltage observed in vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates
Author/Editor: Yu Saitoh
Kazuhide Sumiyoshi
Masaya Okada 他
Author Heading: Yu Saitoh
Kazuhide Sumiyoshi
Masaya Okada
Periodical title: Applied physics express : APEX
No. or year of volume/issue: 3(8) 2010.8
Volume: 3
Issue: 8
Pages: 081001-1～3
Publication date of volume/issue (W3CDTF): 2010-08
ISSN (Periodical Title): 1882-0778
ISSN-L (Periodical Title): 1882-0778
Publication (Periodical Title): Tokyo : Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z78-A526
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 10793587
http://id.ndl.go.jp/bib/10793587
Bibliographic Record Category (NDL): 632