Etching characteristics and mechanism of ZnO and Ga-doped ZnO thin films in inductively coupled HBr/Ar/CHF3 plasma (Special issue: Dry process)

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Etching characteristics and mechanism of ZnO and Ga-doped ZnO thin films in inductively coupled HBr/Ar/CHF3 plasma(Special issue: Dry process)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
10793758
Material type
記事
Author
Yong-Hyun Hamほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2010-08
Material Format
Digital
Journal name
Japanese journal of applied physics : JJAP 49(8) (2) 2010.8
Publication Page
p.08JB03-1~5
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Digital

Material Type
記事
Author/Editor
Yong-Hyun Ham
Alexander Efremov
Hyun-Woo Lee 他
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
49(8) (2) 2010.8
Volume
49
Issue
8
Other Volume
2