Effect of N2 gas flow ratio in plasma-enhanced chemical vapor deposition with SiH4-NH3-N2-He gas mixture on stress relaxation of silicon nitride (Special issue: Dry process)
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- Material Type
- 記事
- Author/Editor
- Tatsunori MurataYoshihiro MiyagawaMasazumi Matsuura 他
- Series Title
- Author Heading
- Periodical title
- Japanese journal of applied physics : JJAP
- No. or year of volume/issue
- 49(8) (2) 2010.8
- Volume
- 49
- Issue
- 8
- Other Volume
- 2