Improvement of thickness uniformity of silicon on insulator layer by numerically controlled sacrificial oxidation using atmospheric-pressure plasma with electrode array system (Special issue: Dry process)

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Improvement of thickness uniformity of silicon on insulator layer by numerically controlled sacrificial oxidation using atmospheric-pressure plasma with electrode array system(Special issue: Dry process)

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
10794028
Material type
記事
Author
Shohei Kamisakaほか
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2010-08
Material Format
Digital
Journal name
Japanese journal of applied physics : JJAP 49(8) (2) 2010.8
Publication Page
p.08JJ04-1~4
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Digital

Material Type
記事
Author/Editor
Shohei Kamisaka
Keinosuke Yoshinaga
Yasuhisa Sano 他
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
49(8) (2) 2010.8
Volume
49
Issue
8
Other Volume
2