先端LSIにおけるチャネル歪評価 (シリコン材料・デバイス)

先端LSIにおけるチャネル歪評価

(シリコン材料・デバイス)

Journal name: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 110(241) 2010.10.21・22

This page shows libraries in Japan other than the National Diet Library that hold the material.

Please contact your local library for information on how to use materials or whether it is possible to request materials from the holding libraries.

other

CiNii Research
Search Service
You can check the holdings of institutions and databases with which CiNii Research is linked at the site of CiNii Research.
Check the holdings of this book

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 記事
Title: 先端LSIにおけるチャネル歪評価
Author/Editor: 小椋厚志
小瀬村大亮
武井宗久他
Series Title: シリコン材料・デバイス
Author Heading: 小椋厚志
小瀬村大亮
武井宗久
Alternative Title: Channel strain evaluation for advanced LSI
Periodical title: 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue: 110(241) 2010.10.21・22
Volume: 110
Issue: 241
Pages: 1～6
Publication date of volume/issue (W3CDTF): 2010-10
ISSN (Periodical Title): 0913-5685
ISSN-L (Periodical Title): 0913-5685
Publication (Periodical Title): 東京 : 電子情報通信学会
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: ラマン分光法
液浸
二軸歪
応力
MOSFET
チャネル
eSiGe
SiN
EBSP
Raman Spectroscopy
immersion
bi-axial strain
stress
channel
NDLC: ZN33
Target Audience: 一般
Report No. (Article): SDM2010-152
Holding library: 国立国会図書館
Call No.: Z16-940
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 10882097
http://id.ndl.go.jp/bib/10882097
Bibliographic Record Category (NDL): 632