メモリー階層構造の変...

メモリー階層構造の変化と不揮発性ロジックへの新展開 (メモリーデバイス研究の最前線)

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メモリー階層構造の変化と不揮発性ロジックへの新展開(メモリーデバイス研究の最前線)

Call No. (NDL)
Z15-243
Bibliographic ID of National Diet Library
10927175
Material type
記事
Author
遠藤 哲郎
Publisher
東京 : 応用物理学会
Publication date
2010-12
Material Format
Paper
Journal name
応用物理 79(12) 2010.12
Publication Page
p.1093~1097
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Paper Digital

Material Type
記事
Author/Editor
遠藤 哲郎
Author Heading
Alternative Title
Restructuring of memory layer in electrical system and its novel evolution based on nonvolatile logic
Periodical title
応用物理
No. or year of volume/issue
79(12) 2010.12
Volume
79
Issue
12