Volume number31(12) 2010.12
3族窒化物/SiCヘ...

3族窒化物/SiCヘテロ界面を用いたワイドギャップ半導体デバイス (特集 新ヘテロ界面の実現に向けた半導体結晶成長技術の進展)

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3族窒化物/SiCヘテロ界面を用いたワイドギャップ半導体デバイス(特集 新ヘテロ界面の実現に向けた半導体結晶成長技術の進展)

Call No. (NDL)
Z15-379
Bibliographic ID of National Diet Library
10934859
Material type
記事
Author
須田 淳ほか
Publisher
東京 : 日本表面科学会
Publication date
2010-12
Material Format
Paper
Journal name
表面科学 = Journal of the Surface Science Society of Japan / 日本表面科学会 編 31(12) 2010.12
Publication Page
p.651~656
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Paper Digital

Material Type
記事
Author/Editor
須田 淳
三宅 裕樹
木本 恒暢
Alternative Title
Wide-bandgap semiconductor devices using group-3 nitride/SiC heterointerface
Periodical title
表面科学 = Journal of the Surface Science Society of Japan / 日本表面科学会 編
No. or year of volume/issue
31(12) 2010.12
Volume
31
Issue
12