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Reduction of efficiency droop in semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates

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Reduction of efficiency droop in semipolar (1101) InGaN/GaN light emitting diodes grown on patterned silicon substrates

Call No. (NDL)
Z78-A526
Bibliographic ID of National Diet Library
10947910
Material type
記事
Author
Ching-Hsueh Chiuほか
Publisher
Tokyo : Japan Society of Applied Physics
Publication date
2011-01
Material Format
Paper
Journal name
Applied physics express : APEX 4(1) 2011.1
Publication Page
p.012105-1~3
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Paper

Material Type
記事
Author/Editor
Ching-Hsueh Chiu
Da-Wei Lin
Chien-Chung Lin 他
Periodical title
Applied physics express : APEX
No. or year of volume/issue
4(1) 2011.1
Volume
4
Issue
1
Pages
012105-1~3
Publication date of volume/issue (W3CDTF)
2011-01