Channel do...

Channel dopant distribution in metal-oxide-semiconductor field-effect transistors analyzed by laser-assisted atom probe tomography

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Channel dopant distribution in metal-oxide-semiconductor field-effect transistors analyzed by laser-assisted atom probe tomography

Call No. (NDL)
Z78-A526
Bibliographic ID of National Diet Library
11054168
Material type
記事
Author
Hisashi Takamizawaほか
Publisher
Tokyo : Japan Society of Applied Physics
Publication date
2011-03
Material Format
Paper
Journal name
Applied physics express : APEX 4(3) 2011.3
Publication Page
p.036601-1~3
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Paper

Material Type
記事
Author/Editor
Hisashi Takamizawa
Koji Inoue
Yasuo Shimizu 他
Periodical title
Applied physics express : APEX
No. or year of volume/issue
4(3) 2011.3
Volume
4
Issue
3
Pages
036601-1~3
Publication date of volume/issue (W3CDTF)
2011-03