二元系遷移金属酸化物ReRAMにおける各抵抗状態の相関関係の分析 (集積回路)

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二元系遷移金属酸化物ReRAMにおける各抵抗状態の相関関係の分析

(集積回路)

Call No. (NDL)
Z16-940
Bibliographic ID of National Diet Library
11069711
Material type
記事
Author
田中 隼人ほか
Publisher
東京 : 電子情報通信学会
Publication date
2011-04
Material Format
Paper
Journal name
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 111(6) 2011.4.18・19
Publication Page
p.111~116
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Paper

Material Type
記事
Author/Editor
田中 隼人
木下 健太郎
岸田 悟
Series Title
Alternative Title
Analyses on co-relation between low and high resistance states in ReRAM consisting of binary-transition-metal-oxides
Periodical title
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
No. or year of volume/issue
111(6) 2011.4.18・19
Volume
111
Issue
6