Separation of thin GaN from sapphire by laser lift-off technique

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Material Type: 記事
Title: Separation of thin GaN from sapphire by laser lift-off technique
Author/Editor: Tetsuzo Ueda
Masahiro Ishida
Masaaki Yuri
Author Heading: Tetsuzo Ueda
Masahiro Ishida
Masaaki Yuri
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 50(4) (1) 2011.4
Volume: 50
Issue: 4
Other Volume: 1
Pages: 041001-1～6
Publication date of volume/issue (W3CDTF): 2011-04
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 11075332
http://id.ndl.go.jp/bib/11075332
Bibliographic Record Category (NDL): 632