Characteristics and the model of resistive random access memory switching of the Ti/TiO2 resistive material depending on the thickness of Ti (Special issue: Solid state devices and materials)

Characteristics and the model of resistive random access memory switching of the Ti/TiO2 resistive material depending on the thickness of Ti

(Special issue: Solid state devices and materials)

Call No. (NDL): Z53-A375
Bibliographic ID of National Diet Library: 11076323

Material type: 記事

Author: Sook Joo Kimほか

Publisher: Tokyo : The Japan Society of Applied Physics

Publication date: 2011-04

Material Format: Paper

Journal name: Japanese journal of applied physics : JJAP 50(4) (2) 2011.4

Publication Page: p.04DD14-1～4

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Paper

Material Type: 記事
Title: Characteristics and the model of resistive random access memory switching of the Ti/TiO2 resistive material depending on the thickness of Ti
Author/Editor: Sook Joo Kim
Min Gyu Sung
Moon Sig Joo 他
Series Title: Special issue: Solid state devices and materials
Author Heading: Sook Joo Kim
Min Gyu Sung
Moon Sig Joo
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 50(4) (2) 2011.4
Volume: 50
Issue: 4
Other Volume: 2
Pages: 04DD14-1～4
Publication date of volume/issue (W3CDTF): 2011-04
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 11076323
http://id.ndl.go.jp/bib/11076323
Bibliographic Record Category (NDL): 632